SOBRE ESTE EPISÓDIO
The sub-blocks of the dual port memory architecture is presented in the tutorial with a key focus on the path from the array bit lines to the data pins for both the read and write. A memory can have many possibilities of how the bits and bits per word is configured which is based on the number of rows and columns in the array. All of the key blocks required to decode the columns, sense the data, select and decode the sense amp and drive the Data Out pin for a read from the bit lines are discussed. The write path from the Data In pin up through the column decode and write select circuitry is also presented.
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Estados Unidos da América
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OUTROS EPISÓDIOS NESTE PODCAST
A synchronous RAM is activated on the rising edge of clock and basically has 2 main internal cycles: the active cycle when the read or write is occurring and the pre-charge cycle that sets up the initial conditions for the next new clock cycle. The timing requirements and relationships that the cus…
This tutorial follows the read path from the word line to the input of the sense amp which includes the initial column decode that selects the appropriate bit line. Particular attention will be paid to the large capacitive load that the memory cells have on the bit lines, and waveforms from simulat…
The interaction in the array between the two ports can have some adverse effects that must be evaluated when designing a Dual Port SRAM, especially when one of the ports is doing a write. This tutorial takes a close look at a "Word Line collision" that occurs when one port is writing while the othe…
This dual port SRAM utilizes a 2-sided differential sensing scheme by taking advantage of the fact that both bit true and bit complement bit lines are available due to the nature of the 6T SRAM bit cell. The sense amp is clocked by a 1 of 4 decoded Sense Amp Clock utilizing a regenerative feedback …
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